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Announcing the latest additions to Qorvo's innovative RF and power portfolio of filters, switches, and SiC FETs power modules, which serve a wide range of Wi-Fi, radar, electronic warfare, EV charging, energy storage, solar & industrial applications. These high-performance solutions simplify RF and power for designers worldwide and are available at Qorvo's authorized channel partners.
Wi-Fi U-NII 5-8 bandBoost Filter
QPQ5601 Features
  • Low insertion loss in Wi-Fi UNII 5-8 bands
  • High rejection in Wi-Fi UNII1-3 bands
  • Extended temperature performance from -20 to +95C

Additional information:

  • High power handling to +28dBm averaged input power
  • Integrated match
  • 1.3x1.7mm laminate package
  • Ideal for wireless access points
2-18GHz High Power SPST Switch
QPC1030D / QPC1031D Features
  • 2-18GHz SPST
  • Low insertion loss
  • 20W input power handling
  • 0/-40V control voltage

Additional information:

  • 1.12x1.62 die & mirror die
  • Ideal for radar, EW & communications systems
1200V, 15A SiC Full-Bridge Module
UFB15C12E1BC3N Features
  • 1200V SiC E1B module with Rds(on) of 70 mΩ full-bridge configurations
  • Silver sinter die attach
  • Optimal operation at 0-15V gate drive with max VGS -20V to +20V

Additional information:

  • Ultra-low Rthjc of 1°C/W per die
  • Ultra-low body diode forward voltage drop: 1.4V
  • E1B package
  • Ideal for EV charging, energy storage, solar & industrial applications
1200V, 25A SiC Full-Bridge Module
UFB25SC12E1BC3N Features
  • 1200V SiC E1B module with Rds(on) of 35 mΩ full-bridge configurations
  • Silver sinter die attach
  • Optimal operation at 0-15V gate drive with max VGS -20V to +20V
  • Ultra-low Rthjc of 0.85°C/W per die

Additional information:

  • Ultra-low body diode forward voltage drop: 1.4V
  • E1B package
  • Ideal for EV charging, energy storage, solar & industrial applications
1200V, 50A SiC Half-Bridge Module
UHB50SC12E1BC3N Features
  • 1200V SiC E1B module with Rds(on) of 19 mΩ full-bridge configurations
  • Silver sinter die attach
  • Optimal operation at 0-15V gate drive with max VGS -20V to +20V
  • Ultra-low Rthjc of 0.46°C/W per die

Additional information:

  • Ultra-low body diode forward voltage drop: 1.2V
  • E1B package
  • Ideal for EV charging, energy storage, solar & industrial applications
1200V, 100A SiC Half-Bridge Module
UHB100SC12E1BC3N Features
  • 1200V SiC E1B module with Rds(on) of 9.4 mΩ full-bridge configurations
  • Silver sinter die attach
  • Optimal operation at 0-15V gate drive with max VGS -20V to +20V
  • Ultra-low Rthjc of 0.23°C/W per die

Additional information:

  • Ultra-low body diode forward voltage drop: 1.4V
  • E1B package
  • Ideal for EV charging, energy storage, solar & industrial applications
Upcoming Event: Embedded World 2024
Experience the future of automotive and industrial technology at this year's Embedded World, where Qorvo will demonstrate exciting Ultra-wideband (UWB), MatterTM and Power Management solutions. Dive into the latest advancements that promise enhanced connectivity, efficiency and security. Schedule a meeting or visit us at booth 4-578.

April 9-11, 2024
Booth 4-578
Nuremberg Exhibition Center
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