Announcing the latest additions to Qorvo's innovative RF and power portfolio of power amplifiers and SiC FETs, which serve a wide range of radar, electronic warfare, DOCSIS 3.1, DOCSIS 4.0, CATV, FTTH applications and server and telecom power supplies. These high-performance solutions simplify RF and power for designers worldwide and are available at Qorvo's authorized channel partners.
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75 Ohm, 25dB CATV Amplifier, 5-1218MHz |
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QPL7425 Features
- 3V, 5V, and 8V
- Gain: 25dB typical
- Adjustable bias using external resistors
Additional information:
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- NF: 1.2dB typical at 850MHz
- 3x3mm QFN package
- Ideal for DOCSIS 3.1, 4.0 & FTTH CPE
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1-6MHz 35W GaN Power Amplifier Module |
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QPM0106 Features
- Wideband RF performance
- Psat: 45.4dBm
- PAE: 41%
- Large signal gain: 22dB
Additional information:
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- Easy power combining
- 15.2x15.2mm flange CP package
- Ideal for radar, EW & communications systems
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750V / 23mOhm, SiC FET, G4, TOLL |
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UJ4C075023L8S Features
- Typical on-resistance RDS(on), typ of 23mOhm
- Max operating temp: 175 degrees Celsius
- Low effective output capacitance - Coss(tr) 232pF
Additional information:
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- Compact footprint for high-density PCBs
- Low gate charge
- TOLL package
- Ideal for server & telecom power supplies
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750V / 33mOhm, SiC FET, G4, TOLL |
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UJ4C075033L8S Features
- Typical on-resistance RDS(on), typ of 33mOhm
- Max operating temp: 175 degrees Celsius
- Low effective output capacitance - Coss(tr) 162pF
Additional information:
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- Compact footprint for high-density PCBs
- Low gate charge
- TOLL package
- Ideal for server & telecom power supplies
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750V / 44mOhm, SiC FET, G4, TOLL |
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UJ4C075044L8S Features
- Typical on-resistance RDS(on), typ of 44mOhm
- Max operating temp: of 175 degrees Celsius
- Low effective output capacitance - Coss(tr) 131pF
Additional information:
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- Compact footprint for high-density PCBs
- Low gate charge
- TOLL package
- Ideal for server & telecom power supplies
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750V / 58mOhm, SiC FET, G4, TOLL |
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UJ4C075060L8S Features
- Typical on-resistance RDS(on), typ of 58mOhm
- Max operating temp: 175 degrees Celsius
- Low effective output capacitance - Coss(tr) 94pF
Additional information:
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- Compact footprint for high-density PCBs
- Low gate charge
- TOLL package
- Ideal for server & telecom power supplies
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Upcoming Webinar: Electrify Tomorrow |
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Join Avnet Silica and Qorvo for a webinar exploring the advancements in electric vehicle technology technology. Qorvo's Kiran Kumar Ramachandra provides insights into the capabilities of SiC FETs, the design of EV powertrains, and the innovations shaping the future of EVs.
Tuesday, March 5
3 p.m. Central European Time / 9 a.m. Eastern Time
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Integrating X-Band Radar for Next-Level Detection and Imaging |
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Radar technology has undergone substantial advancements, allowing for more precision, more efficient power use and notable size reductions. These advancement have given way to significant growth in the global radar industry. This blog provides the basics of next-gen X-band radar designs and integration.
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For your Innovation Video: Matter and the Smart Home |
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Welcome to another installment of "For Your Innovation" in which Eric Creviston demystifies the smart home. Thanks to Matter and UWB, we're entering an era where smart lighting and intuitive audio are not concepts, but realities.
Explore how these innovations are making smart homes more accessible and attuned to your lifestyle.
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Copyright © 2024 Qorvo. All Rights Reserved. |
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